METHOD FOR PRODUCING BIPOLAR-TRANSISTOR INTEGRATED CIRCUITS

FIELD: microelectronics; manufacture of high-integration circuits. SUBSTANCE: first polysilicon film is deposited onto epitaxial layer surface after buried-layer silicon epitaxial structures with side insulation are formed, this film is locally oxidized beyond base regions of transistors, doped for...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Lukasevich M.I, Manzha N.M, Shevchenko A.P, Solov'eva G.P
Format:	Patent
Sprache:	eng ; rus
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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