Semiconductor gas detector with increased sensitivity and its use

The semiconductor gas detector with increased sensitivity has a gas-sensitive layer (1) based on a metal oxide, which is located between a metal bottom electrode (2) and a metal top electrode (3), the electrodes having a capacitor-like arrangement. The upper electrode (3) is formed by a nanoporous l...

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Bibliographische Detailangaben
Hauptverfasser:	Tomašec, Samuel, Krško, Ondrej, Mgr., PhD, Plecenik, Andrej, Prof. RNDr., DrSc, Plecenik, Tomáš, Doc., RNDr., PhD, Ďurina, Pavol, Ing., PhD, Truchlý, Martin, RNDr., PhD, Vidiš, Marek, Mgr
Format:	Patent
Sprache:	eng ; slo
Schlagworte:	INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS TESTING
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	The semiconductor gas detector with increased sensitivity has a gas-sensitive layer (1) based on a metal oxide, which is located between a metal bottom electrode (2) and a metal top electrode (3), the electrodes having a capacitor-like arrangement. The upper electrode (3) is formed by a nanoporous layer of metal that can extend over the entire surface of the substrate (4). The width of at least part of the conductive regions in the nanoporous structure of the top electrode (3) is