Method and apparatus for reducing the first wafer effect

Method and apparatus for reducing the first wafer effect

A method and apparatus are provided for reducing and eliminating the First Wafer Effect. Specifically, in a method or system (11) that employs a separate hot chamber (15) for hot deposition of material from a source (27) that may result in the First Wafer Effect (FWE material), a cold layer of the F...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: YAO GONGDA, WANG HOUGONG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method and apparatus are provided for reducing and eliminating the First Wafer Effect. Specifically, in a method or system (11) that employs a separate hot chamber (15) for hot deposition of material from a source (27) that may result in the First Wafer Effect (FWE material), a cold layer of the FWE material is deposited within the hot deposition chamber prior to deposition of the hot FWE material layer.