METHOD FOR POLISHING A SEMICONDUCTOR WAFER

The method involves providing a disk (5) made of semiconductor material on both front and rear sides between upper and lower polishing plates (8) that are supported with hard and light compressible polishing cloth (1). Distance between the upper and lower polishing plates, and an upper surface (2) o...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	ALEXANDER HEILMAIER, LESZEK MISTUR, VLADIMIR DUTSCHKE, KLAUS RÖTTGER, TORSTEN OLBRICH, MAKOTO TABATA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	The method involves providing a disk (5) made of semiconductor material on both front and rear sides between upper and lower polishing plates (8) that are supported with hard and light compressible polishing cloth (1). Distance between the upper and lower polishing plates, and an upper surface (2) of the polishing cloth stays in contact with disk to be polished. A polishing gap extends from an inner edge of the polishing cloth to an outer edge of the polishing cloth, where height of the polishing gap at the inner edge differs from a height of the polishing gap at the outer edge.