METHOD FOR PRODUCING A MULTIPLICITY OF SEMICONDUCTOR WAFERS BY PROCESSING A SINGLE CRYSTAL

15Method for producing a multiplicity of semiconductor wafers by processing a single crystalAbstractThe invention relates to a method for producing a multiplicity of semiconductor wafers by processing a single crystal, the central longitudinal axis of which has an orientation that deviates from a so...

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Bibliographische Detailangaben
Hauptverfasser:	HANS OELKRUG, JOSEF SCHUSTER
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:	15Method for producing a multiplicity of semiconductor wafers by processing a single crystalAbstractThe invention relates to a method for producing a multiplicity of semiconductor wafers by processing a single crystal, the central longitudinal axis of which has an orientation that deviates from a sought orientation of the crystal lattice of the semiconductor wafers. The method comprises slicing at least one block from a single crystal present in a grown state along cutting planes perpendicular to a crystallographic axis representing the sought orientation of the crystal lattice of the semiconductor wafers; grinding the lateral surface of the block around the crystallographic axis; and slicing a multiplicity of semiconductor wafers from the ground block along cutting planes perpendicular to the crystallographic axis.Fig. 2