MANUFACTURE OF THIN SOI DEVICES

MANUFACTURE OF THIN SOI DEVICES

AbstractManufacture of Thin SOI DevicesThe present invention relates to a method comprising forming a structure by stepscomprising a) forming a first etch stop layer on a donor substrate; b) forming a secondetch stop layer on the first etch stop layer, wherein the material of the second etchstop lay...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: AULNETTE, CECILE, DAVAL, NICOLAS
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:AbstractManufacture of Thin SOI DevicesThe present invention relates to a method comprising forming a structure by stepscomprising a) forming a first etch stop layer on a donor substrate; b) forming a secondetch stop layer on the first etch stop layer, wherein the material of the second etchstop layer differs from the material of the first etch stop layer; c) forming a thin siliconfilm on the second etch stop layer; and bonding the structure to a target substrate; anddetaching the donor substrate by splitting initiated in the first etch stop layer.Figure 1