SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
On top of respective areas divided by partition plates (10,60), that is, a cassette station (2), a processing station (3), and an interface section (4) in a coating and developing processing system (1), gas supply sections (70- 72) for supplying an inert gas into the respective areas are provided. E...
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| creator | IIDA NARUAKI AOYAMA TORU MATSUYAMA YUJI YAMASHITA MASAMI SHIMURA SATORU DEGUCHI MASATOSHI KATANO TAKAYUKI MATSUI HIDEFUMI YOSHIHARA KOUSUKE KITANO JUNICHI IWAKI HIROYUKI KITANO TAKAHIRO SUZUKI YO |
| description | On top of respective areas divided by partition plates (10,60), that is, a cassette station (2), a processing station (3), and an interface section (4) in a coating and developing processing system (1), gas supply sections (70- 72) for supplying an inert gas into the respective areas are provided. Exhaust pipes (75-78) for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections (70-72) into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes (75-78). |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_SG168411A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>SG168411A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_SG168411A13</originalsourceid><addsrcrecordid>eNrjZLALDnUKDglyDHFVCAjyd3YNDvb0c1dwDAhwBIqFBis4-rkoYFXi6xri4e_Cw8CalphTnMoLpbkZ5N1cQ5w9dFML8uNTiwsSk1PzUkvig90NzSxMDA0dDY0JqwAA-FMp2A</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD</title><source>esp@cenet</source><creator>IIDA NARUAKI ; AOYAMA TORU ; MATSUYAMA YUJI ; YAMASHITA MASAMI ; SHIMURA SATORU ; DEGUCHI MASATOSHI ; KATANO TAKAYUKI ; MATSUI HIDEFUMI ; YOSHIHARA KOUSUKE ; KITANO JUNICHI ; IWAKI HIROYUKI ; KITANO TAKAHIRO ; SUZUKI YO</creator><creatorcontrib>IIDA NARUAKI ; AOYAMA TORU ; MATSUYAMA YUJI ; YAMASHITA MASAMI ; SHIMURA SATORU ; DEGUCHI MASATOSHI ; KATANO TAKAYUKI ; MATSUI HIDEFUMI ; YOSHIHARA KOUSUKE ; KITANO JUNICHI ; IWAKI HIROYUKI ; KITANO TAKAHIRO ; SUZUKI YO</creatorcontrib><description>On top of respective areas divided by partition plates (10,60), that is, a cassette station (2), a processing station (3), and an interface section (4) in a coating and developing processing system (1), gas supply sections (70- 72) for supplying an inert gas into the respective areas are provided. Exhaust pipes (75-78) for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections (70-72) into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes (75-78).</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110228&DB=EPODOC&CC=SG&NR=168411A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110228&DB=EPODOC&CC=SG&NR=168411A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>IIDA NARUAKI</creatorcontrib><creatorcontrib>AOYAMA TORU</creatorcontrib><creatorcontrib>MATSUYAMA YUJI</creatorcontrib><creatorcontrib>YAMASHITA MASAMI</creatorcontrib><creatorcontrib>SHIMURA SATORU</creatorcontrib><creatorcontrib>DEGUCHI MASATOSHI</creatorcontrib><creatorcontrib>KATANO TAKAYUKI</creatorcontrib><creatorcontrib>MATSUI HIDEFUMI</creatorcontrib><creatorcontrib>YOSHIHARA KOUSUKE</creatorcontrib><creatorcontrib>KITANO JUNICHI</creatorcontrib><creatorcontrib>IWAKI HIROYUKI</creatorcontrib><creatorcontrib>KITANO TAKAHIRO</creatorcontrib><creatorcontrib>SUZUKI YO</creatorcontrib><title>SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD</title><description>On top of respective areas divided by partition plates (10,60), that is, a cassette station (2), a processing station (3), and an interface section (4) in a coating and developing processing system (1), gas supply sections (70- 72) for supplying an inert gas into the respective areas are provided. Exhaust pipes (75-78) for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections (70-72) into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes (75-78).</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLALDnUKDglyDHFVCAjyd3YNDvb0c1dwDAhwBIqFBis4-rkoYFXi6xri4e_Cw8CalphTnMoLpbkZ5N1cQ5w9dFML8uNTiwsSk1PzUkvig90NzSxMDA0dDY0JqwAA-FMp2A</recordid><startdate>20110228</startdate><enddate>20110228</enddate><creator>IIDA NARUAKI</creator><creator>AOYAMA TORU</creator><creator>MATSUYAMA YUJI</creator><creator>YAMASHITA MASAMI</creator><creator>SHIMURA SATORU</creator><creator>DEGUCHI MASATOSHI</creator><creator>KATANO TAKAYUKI</creator><creator>MATSUI HIDEFUMI</creator><creator>YOSHIHARA KOUSUKE</creator><creator>KITANO JUNICHI</creator><creator>IWAKI HIROYUKI</creator><creator>KITANO TAKAHIRO</creator><creator>SUZUKI YO</creator><scope>EVB</scope></search><sort><creationdate>20110228</creationdate><title>SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD</title><author>IIDA NARUAKI ; AOYAMA TORU ; MATSUYAMA YUJI ; YAMASHITA MASAMI ; SHIMURA SATORU ; DEGUCHI MASATOSHI ; KATANO TAKAYUKI ; MATSUI HIDEFUMI ; YOSHIHARA KOUSUKE ; KITANO JUNICHI ; IWAKI HIROYUKI ; KITANO TAKAHIRO ; SUZUKI YO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_SG168411A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>IIDA NARUAKI</creatorcontrib><creatorcontrib>AOYAMA TORU</creatorcontrib><creatorcontrib>MATSUYAMA YUJI</creatorcontrib><creatorcontrib>YAMASHITA MASAMI</creatorcontrib><creatorcontrib>SHIMURA SATORU</creatorcontrib><creatorcontrib>DEGUCHI MASATOSHI</creatorcontrib><creatorcontrib>KATANO TAKAYUKI</creatorcontrib><creatorcontrib>MATSUI HIDEFUMI</creatorcontrib><creatorcontrib>YOSHIHARA KOUSUKE</creatorcontrib><creatorcontrib>KITANO JUNICHI</creatorcontrib><creatorcontrib>IWAKI HIROYUKI</creatorcontrib><creatorcontrib>KITANO TAKAHIRO</creatorcontrib><creatorcontrib>SUZUKI YO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>IIDA NARUAKI</au><au>AOYAMA TORU</au><au>MATSUYAMA YUJI</au><au>YAMASHITA MASAMI</au><au>SHIMURA SATORU</au><au>DEGUCHI MASATOSHI</au><au>KATANO TAKAYUKI</au><au>MATSUI HIDEFUMI</au><au>YOSHIHARA KOUSUKE</au><au>KITANO JUNICHI</au><au>IWAKI HIROYUKI</au><au>KITANO TAKAHIRO</au><au>SUZUKI YO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD</title><date>2011-02-28</date><risdate>2011</risdate><abstract>On top of respective areas divided by partition plates (10,60), that is, a cassette station (2), a processing station (3), and an interface section (4) in a coating and developing processing system (1), gas supply sections (70- 72) for supplying an inert gas into the respective areas are provided. Exhaust pipes (75-78) for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections (70-72) into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes (75-78).</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD |
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