INTEGRATED CIRCUIT SYSTEM EMPLOYING SELECTIVE EPITAXIAL GROWTH TECHNOLOGY

INTEGRATED CIRCUIT SYSTEM EMPLOYING SELECTIVE EPITAXIAL GROWTH TECHNOLOGY

An integrated circuit system that includes: providing a substrate; depositing a dielectric on the substrate; depositing an isolation dielectric on the dielectric; forming a trench through the isolation dielectric and the dielectric to expose the substrate; depositing a dielectric liner over the inte...

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Bibliographische Detailangaben
Hauptverfasser: LEE JAMES, WOH LAI CHUNG, HUANG LIU, ZHAO LUN, WIDODO JOHNNY, CHOO HSIA LIANG, GAO WENZHI, MISHRA SHAILENDRA, ALEX SEE K.H
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An integrated circuit system that includes: providing a substrate; depositing a dielectric on the substrate; depositing an isolation dielectric on the dielectric; forming a trench through the isolation dielectric and the dielectric to expose the substrate; depositing a dielectric liner over the integrated circuit system; processing the dielectric liner to form a trench spacer; and depositing an epitaxial growth within the trench that includes a crystalline orientation that is substantially identical to the substrate.