DRY REACTIVE ION ETCHING

DRY REACTIVE ION ETCHING

DRY REACTIVE ION ETCHING A method of etching a wafer includes the steps of applying a dry film resist to a surface to be etched, curing the dry film resist, patterning the dry film resist to expose areas of the wafer to be etched, etching the wafer with a dry reactive ion etch and removing the remai...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: YOONG POON LYE, SOORIAKUMAR KATHIRGAMASUNDARAM, MUN CHONG WAI
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:DRY REACTIVE ION ETCHING A method of etching a wafer includes the steps of applying a dry film resist to a surface to be etched, curing the dry film resist, patterning the dry film resist to expose areas of the wafer to be etched, etching the wafer with a dry reactive ion etch and removing the remaining dry film resist.