LOW DIELECTRIC MATERIALS AND METHODS FOR MAKING SAME

LOW DIELECTRIC MATERIALS AND METHODS FOR MAKING SAME

Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. These materials are characterized as having a dielectric constant (K) a dielectric constant of about 3.7 or...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: WEIGEL SCOTT JEFFREY, MACDOUGALL JAMES EDWARD, PETERSON BRIAN KEITH, KIRNER JOHN FRANCIS, DEIS THOMAS ALAN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
CABLES
CHEMISTRY
COMPOUNDS THEREOF
CONDUCTORS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INORGANIC CHEMISTRY
INSULATORS
METALLURGY
NON-METALLIC ELEMENTS
SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. These materials are characterized as having a dielectric constant (K) a dielectric constant of about 3.7 or less; a normalized wall elastic modulus (E0'), derived in part from the dielectric constant of the material, of about 15 GPa or greater; and a metal impurity level of about 500 ppm or less. Low dielectric materials are also disclosed having a dielectric constant of less than about 1.95 and a normalized wall elastic modulus (E0'), derived in part from the dielectric constant of the material, of greater than about 26 GPa.