SEMICONDUCTOR PLUG PROTECTED BY PROTECTIVE DIELECTRIC LAYER IN THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR PLUG PROTECTED BY PROTECTIVE DIELECTRIC LAYER IN THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR FORMING THE SAME

Embodiments of 3D memory devices with a semiconductor plug protected by a dielectric layer and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack including a plurality of interleaved conductor layers and dielectric layers on the substra...

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Bibliographische Detailangaben
Hauptverfasser: ZHANG, Fushan, WANG, EnBo, YANG, Haohao, XU, Qianbing, ZHANG, Ruo Fang, ZHANG, Yong
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:Embodiments of 3D memory devices with a semiconductor plug protected by a dielectric layer and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack including a plurality of interleaved conductor layers and dielectric layers on the substrate, and a memory string extending vertically through the memory stack. The memory string includes a semiconductor plug in a lower portion of the memory string, a protective dielectric layer on the semiconductor plug, and a memory film above the protective dielectric layer and along a sidewall of the memory string.