USE OF A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING OF COBALT AND / OR COBALT ALLOY COMPRISING SUBSTRATES

Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a poly(amino acid) and or a salt thereof (C) at least one amino ac...

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Bibliographische Detailangaben
Hauptverfasser: LAUTER, Michael, GOLZARIAN, Reza M, GUEVENC, Haci Osman, WEI, Te Yu, LAN, Yongqing, SIEBERT, Max, USMAN IBRAHIM, Sheik Ansar
Format: Patent
Sprache:eng
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Zusammenfassung:Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a poly(amino acid) and or a salt thereof (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.