GAS-BARRIER PLASTIC MOLDED PRODUCT AND METHOD FOR MANUFACTURING SAME

An object of the present disclosure is to provide a gas barrier plastic molded body which is excellent in gas barrier properties and transparency and a method for producing the same. A gas barrier plastic molded body 90 according to the present disclosure includes a plastic molded body 91 and a gas...

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Bibliographische Detailangaben
1. Verfasser:	TABUCHI, Hiroyasu
Format:	Patent
Sprache:	eng
Schlagworte:	ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS,e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES,DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS CONVEYING DIFFUSION TREATMENT OF METALLIC MATERIAL HANDLING THIN OR FILAMENTARY MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PACKAGES PACKAGING ELEMENTS PACKING PERFORMING OPERATIONS STORING SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Beschreibung
Zusammenfassung:	An object of the present disclosure is to provide a gas barrier plastic molded body which is excellent in gas barrier properties and transparency and a method for producing the same. A gas barrier plastic molded body 90 according to the present disclosure includes a plastic molded body 91 and a gas barrier thin film 92 provided on a surface of the plastic molded body 91, and in the gas barrier plastic molded body, the gas barrier thin film 92 contains silicon (Si), carbon (C), and oxygen (O) as constituent elements and has a region, in a which a main peak is observed, at a peak appearance position of binding energy of Si-C when the gas barrier thin film is subjected to an X-ray photoelectron spectroscopic analysis under Condition (1). Condition (1): a measurement range is set to 95 to 105 eV.