METHOD FOR PRODUCING MULTICRYSTALLINE SILICON

The object of the invention is a method for producing multicrystalline silicon, comprising the following steps: providing a crucible for receiving a silicon melt, which comprises a bottom and an internal face, wherein at least the bottom of the crucible has a coating containing one or more compounds...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	DORNBERGER, Erich, REIMANN, Christian, HESSE, Karl
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The object of the invention is a method for producing multicrystalline silicon, comprising the following steps: providing a crucible for receiving a silicon melt, which comprises a bottom and an internal face, wherein at least the bottom of the crucible has a coating containing one or more compounds selected from the group consisting of Si3N4, oxidised Si3N4 and SiO2 ; arranging a silicon layer in the crucible in contact with the coating of the bottom of the crucible; arranging polycrystalline silicon in the crucible in contact with the silicon layer; heating the crucible, until the polycrystalline silicon and silicon layer are completely melted to form a silicon melt; directional solidification of the silicon melt so as to result in a multicrystalline silicon block, characterised in that on heating the crucible and/or on melting the silicon layer, the silicon layer releases a reducing agent.