ETCHING SOLUTION FOR TUNGSTEN WORD LINE RECESS

OF THE DISCLOSURE ETCHING SOLUTION FOR TUNGSTEN WORD LINE RECESS Described herein is an etching solution suitable for both tungsten-containing metals and TiN-containing materials, which comprises: water; and one or more than one oxidizers; and one or more than one of the components selected from the...

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Bibliographische Detailangaben
Hauptverfasser: Wen Dar Liu, Jhih Kuei Ge, Yi-Chia Lee
Format: Patent
Sprache:eng
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Zusammenfassung:OF THE DISCLOSURE ETCHING SOLUTION FOR TUNGSTEN WORD LINE RECESS Described herein is an etching solution suitable for both tungsten-containing metals and TiN-containing materials, which comprises: water; and one or more than one oxidizers; and one or more than one of the components selected from the group consisting of: one or more fluorine-containing-etching compounds, one or more organic solvents, one or more chelating agents, one or more corrosion inhibitors and one or more surfactants. [no figure] --