Semiconductor Device Including Through Silicon Vias Distributing Current

OF THE DISCLOSURE A semiconductor device includes first to M-th semiconductor dies stacked in a first direction. Each of the first to M-th semiconductor dies includes a substrate, first to K-th through silicon vias passing through the substrate in the first direction, and a first circuit to receive...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	JONG-HO MOON, JAEYOUN YOUN, CHISUNG OH, SEUNGHAN WOO, KYOMIN SOHN, YONG-KI KIM, SOOJUNG RHO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTINGELECTRIC POWER CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERATION SEMICONDUCTOR DEVICES SYSTEMS FOR STORING ELECTRIC ENERGY
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	OF THE DISCLOSURE A semiconductor device includes first to M-th semiconductor dies stacked in a first direction. Each of the first to M-th semiconductor dies includes a substrate, first to K-th through silicon vias passing through the substrate in the first direction, and a first circuit to receive power through a power supply line electrically connected to the first through silicon via. Each of first to K-th through silicon vias of the N-th semiconductor die is electrically connected to a through silicon via of first to K-th through silicon vias of the (N+1)-th semiconductor die that is spaced apart therefrom in a plan view. FIG. 1