ETCHANT SOLUTIONS AND METHOD OF USE THEREOF

Etching compositions and method of using the etching compositions comprising potassium hydroxide; one or more than one additional alkaline compounds selected from the group consisting of TEAH, TMAF and NH 4 OH; and water; or etching compositions comprising one or more than one inorganic alkali basic...

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Bibliographische Detailangaben
Hauptverfasser:	TIANNIU CHEN, WILLIAM JACK CASTEEL, JR, GENE EVERAD PARRIS
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES
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Beschreibung
Zusammenfassung:	Etching compositions and method of using the etching compositions comprising potassium hydroxide; one or more than one additional alkaline compounds selected from the group consisting of TEAH, TMAF and NH 4 OH; and water; or etching compositions comprising one or more than one inorganic alkali basic hydroxides selected from the group consisting of potassium hydroxide, cesium hydroxide, sodium hydroxide, rubidium hydroxide, or lithium hydroxide; optionally one or more than one additional alkaline compounds; water; and optionally one or more corrosion inhibitors; wherein the composition preferentially etches silicon present on a substrate as compared to silicon dioxide present on said substrate.