Gas Flow Flange For A Rotating Disk Reactor For Chemical Vapor Deposition
A gas flow flange for a rotating disk reactor for chemical vapor deposition, the gas flow flange comprising: a) a first section comprising a plurality of first gas input channels positioned inside and parallel to a top surface of the first section, and a plurality of second gas input channels positi...
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Patent |
Sprache: | eng |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | A gas flow flange for a rotating disk reactor for chemical vapor deposition, the gas flow flange comprising: a) a first section comprising a plurality of first gas input channels positioned inside and parallel to a top surface of the first section, and a plurality of second gas input channels positioned perpendicular to the top surface of the first section and extending from the top surface to a bottom surface of the first section; and b) a second section comprising: 1) a plurality of first gas input channels positioned perpendicular to a top surface of the second section and extending through the top surface to a bottom surface of the second section, each of the plurality of first gas input channels of the second section being aligned with an output of a corresponding one of the plurality of first gas input channels in the first section; 2) a plurality of second gas input channels positioned perpendicular to and extending from the top surface to the bottom surface of the second section, each of the plurality of second gas input channels being aligned with a corresponding one of the plurality of second gas input channels in the first section; and 3) fluid cooling conduits that are formed in the second section and extending parallel to the top surface of the second section. |
---|