METHOD AND APPARATUS FOR ANGULAR-RESOLVED SPECTROSCOPIC LITHOGRAPHY CHARACTERIZATION

An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity o...

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Bibliographische Detailangaben
Hauptverfasser:	DUSA, MIRCEA, KIERS, ANTOINE GASTON MARIE, GROUWSTRA, CEDRIC DESIRE, VAN DOMMELEN, YOURI JOHANNES LAURENTIUS MARIA, PELLEMANS, HENRICUS PETRUS MARIA, VAN DER SCHAAR, MAURITS, BLEEKER, ARNO JAN, VAN KRAAIJ, MARKUS GERARDUS MARTINUS, DEN BOEF, ARIE JEFFREY, LUEHRMANN, PAUL FRANK
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MATERIALS THEREFOR MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS TESTING
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Beschreibung
Zusammenfassung:	An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized light and their relative phase difference. The apparatus according to the invention may be used for calculating variations in substrate tilt by putting a shaped obscuration in the radiation beam and detecting changes in the width and shape of the shaped obscuration on the substrate caused by variations in the substrate tilt. The shaped obscuration may be a cross-hair or any other shape. The idea of measuring wafer tilt is based on the fundamental relation that a tilt in the wafer plane causes a shift in the pupil plane.