FORFARANDE FOR FRAMSTELLNING AV POLYKRISTALLIN KUBISK BORNITRID

According to the invention, a method of preparing polycrystalline cubic boron nitride resides in that hexagonal boron nitride is subjected to the action of pressure of 40-90 kbar and temperature of 1200 DEG -2400 DEG C. in the presence of a catalyst, namely, a zinc compound.

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Bibliographische Detailangaben
Hauptverfasser: 4)V V DIGONSKY, 3)N G KUSHKOVA, 1)V I FARAFONTOV, 5)V S LYSANOV, 2)M I SOKHOR
Format: Patent
Sprache:swe
Schlagworte:
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Beschreibung
Zusammenfassung:According to the invention, a method of preparing polycrystalline cubic boron nitride resides in that hexagonal boron nitride is subjected to the action of pressure of 40-90 kbar and temperature of 1200 DEG -2400 DEG C. in the presence of a catalyst, namely, a zinc compound.