FORFARANDE FOR FRAMSTELLNING AV POLYKRISTALLIN KUBISK BORNITRID
According to the invention, a method of preparing polycrystalline cubic boron nitride resides in that hexagonal boron nitride is subjected to the action of pressure of 40-90 kbar and temperature of 1200 DEG -2400 DEG C. in the presence of a catalyst, namely, a zinc compound.
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Format: | Patent |
Sprache: | swe |
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Zusammenfassung: | According to the invention, a method of preparing polycrystalline cubic boron nitride resides in that hexagonal boron nitride is subjected to the action of pressure of 40-90 kbar and temperature of 1200 DEG -2400 DEG C. in the presence of a catalyst, namely, a zinc compound. |
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