LJUSKENSLIGT HALVLEDARDON INNEFATTANDE ETT HALVLEDARKRISTALLSUBSTRAT OCH EN ANTIREFLEXBELEGGNING PA SUBSTRATET

A polycrystalline silicon layer provides an antireflective coating on a semiconductor surface of a photo-sensitive detector, the polycrystalline silicon layer containing from 25 to 45 atomic percent of oxygen and having a refractive index intermediate that of the semiconductor crystal and the exteri...

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Hauptverfasser: T MAMINE, T MATSUSHITA
Format: Patent
Sprache:swe
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Zusammenfassung:A polycrystalline silicon layer provides an antireflective coating on a semiconductor surface of a photo-sensitive detector, the polycrystalline silicon layer containing from 25 to 45 atomic percent of oxygen and having a refractive index intermediate that of the semiconductor crystal and the exterior environment.