METHOD OF DRY LITHOGRAPHY

FIELD: microelectronics. SUBSTANCE: invention refers to microlithography as one of most important stages of technology of microelectronics and is meant for formation of resist masks. Method of dry lithography includes application of layer of resist on substrate, formation of latent image in it by way of local exposure to ultraviolet or high-energy radiation and presiliconizing which results in chemical decomposition and/or coupling of molecules of sensitive layer, siliconization of resist and plasma development of mask. Layer of resist is applied by method of dry plasma polymerization in two stages: first basic layer of resist is formed directly in plasma, then sensitive layer - in zone of afterglow of plasma. Photosensitive layer is formed by coprecipitation of its polymer base and diazoquinone which is evaporated beforehand by thermal heating in vacuum chamber before precipitation on to substrate and then is transported in flow of gas-carrier to substrate. This provides for dry application of resist on to substrate under action of plasma without destruction of sensitive layer. In combustion with subsequent gas-phase siliconization of resist and plasma development of mask this renders photolithographic cycle completely dry and makes it possible to instrument such process in hardware in the form of systems of cluster tools type, to diminish severity of requirements and cost of expenditures to maintain needed technological climate in production rooms of enterprises of microelectronic industry, to reduce presence of defects and manufacturing cost of articles, to increase output of good articles and their reliability. EFFECT: diminished severity of requirements and expenses on maintenance of technological climate in production rooms, increased output of good articles and enhanced functional reliability of manufactured articles. 8 cl, 3 dwg Изобретение относится к микролитографии как одной из важнейших стадий технологии микроэлектроники и предназначено для формирования резистных масок. Способ включает в себя нанесение слоя резиста на подложку, формирование в нем скрытого изображения путем локального экспонирования УФ или высокоэнергетичным излучением и предсилиляционной обработки, в результате которых происходят химическое разложение и/или соединение молекул чувствительного слоя, силилирование резиста и плазменное проявление маски и отличается тем, что нанесение слоя резиста на подложку осуществляют сухим методом плазменной полимеризации в две стадии: сначала