METHOD OF PRODUCING A SEMICONDUCTOR FILM BASED ON ORGANO-INORGANIC COMPLEX HALOGENIDES WITH A PEROVSKITE-LIKE STRUCTURE

FIELD: materials science.SUBSTANCE: invention relates to material science, namely to methods of producing a semiconductor film based on complex halogenides with a perovskite-like structure, which can be used as light-absorbing layer in solid-state, including thin-film, flexible or tandem solar cells, as well as for creation of optoelectronic, in particular, light-emitting devices. Method of producing a semiconductor film based on complex halogenides with a perovskite-like structure involves the following steps: a) forming a layer of a precursor of component B on a carrier substrate, b) depositing a layer of reagent on the surface of the layer of the precursor of component B, and c) treatment of carrier substrate with applied layers of reagent Xfor a period of time which is necessary and sufficient for complete reaction conversion of the deposited reagent and precursor of component B. In step b), the reagent used is a reaction composition containing a mixture of AX and Xwith molar ratio [X]/[AX] in range 0