METHOD OF PRODUCING THIN-FILM HALOGENIDE SEMICONDUCTOR STRUCTURES (VERSIONS)

FIELD: manufacturing technology.SUBSTANCE: invention relates to material science, specifically to production of thin films or contact microprinting planar structures of halide semiconductors of compound ABX, including with organic cations, which can be used as light-absorbing layer in solid-state, including thin-film, flexible or tandem solar cells or for creation of light-emitting devices. Method of producing thin-film structures of hybrid halide semiconductors of compound ABX, which include component A in form of singly-charged cation A, selected from methyl ammonium CHNH, formamidinium (NH)CH, guanidinium C (NH), Cs, Rb, as well as mixtures thereof, component X in form of singly-charged anion X, selected from Cl, Br, I, as well as mixtures thereof, and component B in form of a polyvalent cation selected from Pb, Sn, Bi, as well as mixtures thereof, on the surface of the auxiliary substrate, a process solid sacrificial layer is formed, which is a composite material made from a polymer matrix with a uniformly distributed component AX or a mixture of AX and X, separately on the carrier substrate a uniform layer of the precursor B of the component is formed, the sacrificial layer is brought into contact with the layer of the precursor B and held for a period of time, which ensures the complete reaction conversion of the layer of the precursor of component B when reacting with precursors of AX or a mixture of AX and Xinto ABXcompound layer, after which sacrificial layer is removed.EFFECT: simple and high technological effectiveness of the formation of thin-film structures owing to use of reaction components in the solid layer composition, and not in a liquid form, as well as enabling controlled application of components of AX and Xdue to diffusion mode of conversion reaction, which improves reproducibility of disclosed method.16 cl, 2 dwg, 4 ex Изобретение относится к области материаловедения, а именно к технологии получения тонких пленок или контактных микропечатных планарных структур галогенидных полупроводников состава АВХ, в том числе с органическими катионами, которые могут быть использованы в качестве светопоглощающего слоя в твердотельных, в том числе тонкопленочных, гибких или тандемных солнечных элементах или для создания светоизлучающих устройств. В способе получения тонкопленочных структур гибридных галогенидных полупроводников состава АВХ, в состав которых входят компонент А в виде однозарядного катиона А, выбранного из катионов метиламмония CHNH