METHOD OF CULTIVATION OF EPITAXIAL FILMS OF EUROPIUM MONOXIDE ON GRAPHENE (OPTIONS)

FIELD: manufacturing technology.SUBSTANCE: invention relates to the methods for producing epitaxial thin-film materials, namely films of europium monoxide on graphene, and it can be used to create such spintronics devices as a spin transistor and an injector of spin-polarized carriers. Method of growing europium monoxide EuO epitaxial films on graphene involves the formation of a europium submonolayer with a surface phase (√3 × √3) by molecular beam epitaxy on the surface of a preformed graphene monolayer structure/substrate at the substrate temperature T=20-100 °C and pressure of the flow of atoms of europium P=(1⋅10-1⋅10) Torr, deposition of a layer of europium monoxide EuO at the temperature of the substrate T=20-100 °C, pressure of oxygen flow P=(1⋅10-1⋅10) Torr and pressure flux of europium atoms P=(1⋅10-1⋅10) Torr, satisfying condition 10⋅P≤P≤11⋅P, to achieve the required layer thickness of europium monoxide EuO. In one of the embodiments of the invention after the above operations, a layer of europium monoxide EuO is deposited at the temperature of the substrate T=340-420 °C, oxygen flow pressure P=(1⋅10-1⋅10A) Torr and pressure flux of europium atoms P=(1⋅10-1.5⋅10A) Torr satisfying condition 10⋅P≤P≤15⋅P, to achieve the required total thickness of the layer of europium monoxide EuO. In particular cases of carrying out the invention after deposition of a film of europium monoxide, it is annealed in vacuum within the temperature range of T=490-520 °C.EFFECT: formation of epitaxial stoichiometric films of europium monoxide with the thickness of more than 5 nm with high crystalline perfection without inclusions of phases of higher oxides on graphene is obtained, which allows to obtain magnetic states in graphene to create such technical devices as a single-electron transistor and a spin filter.4 cl, 4 dwg, 4 ex Изобретение относится к способам получения эпитаксиальных тонкопленочных материалов, а именно пленок монооксида европия на графене, и может быть использовано для создания таких устройств спинтроники, как спиновый транзистор и инжектор спин-поляризованных носителей. Способ выращивания эпитаксиальных пленок монооксида европия EuO на графене включает формирование субмонослоя европия с поверхностной фазойметодом молекулярно-лучевой эпитаксии на поверхности предварительно сформированной структуры монослой графена/подложка при температуре подложки T=20-100°С и давлении потока атомов европия P=(1⋅10-1⋅10) Торр, осаждение слоя монооксида европия EuO при