METHOD OF PRODUCTION OF ACTIVE LAYER FOR GENERAL-PURPOSE MEMORY ON BASIS OF RESISTIVE EFFECT

METHOD OF PRODUCTION OF ACTIVE LAYER FOR GENERAL-PURPOSE MEMORY ON BASIS OF RESISTIVE EFFECT

FIELD: electricity.SUBSTANCE: method of production of the active layer for the general-purpose memory on the basis of resistive effect includes deposition of the dielectric layer - hafnium oxide - on the underlay. As a result of deposition, hafnium oxide of non-stoichiometric composition is obtained...

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Hauptverfasser: Voronkovskij Vitalij Aleksandrovich, Islamov Damir Revinirovich, Gritsenko Vladimir Alekseevich, Aliev Vladimir Shakirovich
Format: Patent
Sprache:eng ; rus
Schlagworte:
ELECTRICITY
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Zusammenfassung:FIELD: electricity.SUBSTANCE: method of production of the active layer for the general-purpose memory on the basis of resistive effect includes deposition of the dielectric layer - hafnium oxide - on the underlay. As a result of deposition, hafnium oxide of non-stoichiometric composition is obtained - HfO, containing oxygen vacancies. The deposition is carried out by ion beam sputtering-deposition of Hf target in the oxygen-containing atmosphere. At the same time, stoichiometric composition x is set with partial oxygen pressure of x