METHOD FOR DETERMINING CRACK GROWTH RATE IN THE SAMPLE AND DEVICE FOR ITS IMPLEMENTATION

FIELD: measuring equipment.SUBSTANCE: invention relates to measurement equipment and can be used during the destruction processes research of materials with formation of cracks. Essence: initial length is measured. In the test processes heat flux power is measured from the test sample, and crack gro...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Vshivkov Aleksej Nikolaevich, Plekhov Oleg Anatolevich, ZHan-Kristof Batsal, Prokhorov Aleksandr Evgenevich, JUrgen Ber
Format: Patent
Sprache:eng ; rus
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:FIELD: measuring equipment.SUBSTANCE: invention relates to measurement equipment and can be used during the destruction processes research of materials with formation of cracks. Essence: initial length is measured. In the test processes heat flux power is measured from the test sample, and crack growth rate is determined by formula. Device includes a sensor in contact with the sample, and information processing device from the sensor, including direct voltage source, an amplifier, a microcontroller, a personal computer. Sensor includes two Peltier elements, made in the form of the flat plates. First Peltier element is in contact with the sample by one side of the plate, and with the second Peltier element by the other side. Device additionally comprises a radiator in contact with the second side of the second Peltier element, and two thermocouples, one of which is located between the Peltier elements, and the second is located in the place of constant temperature. Information processing device additionally comprises a field-effect transistor and a bypass resistor, wherein the amplifier is connected to the first Peltier element, with two thermocouples, shunting resistor, installed between joints of the amplifier with first Peltier element, and the second thermocouple and microcontroller. Field-effect transistor is installed in the microcontroller connection circuit with the second Peltier element and a DC voltage source. Microcontroller is made with a possibility of pulse-width modulation of power supply voltage and is connected to a personal computer.EFFECT: increase of measurement accuracy, simplified design, expanded operating performances.2 cl, 4 dwg Изобретение относится к области измерительной техники и может быть использовано при исследовании процессов разрушения материалов с образованием трещин. Сущность:измеряют начальную длину трещины. В процессе испытаний замеряют мощность теплового потока от образца, а скорость роста трещины определяют по формуле. Устройство содержит датчик, контактирующий с образцом, и устройство обработки информации с датчика, включающее источник постоянного напряжения, усилитель, микроконтроллер, персональный компьютер. Датчик содержит два элемента Пельтье, выполненных в виде в плоских пластин. Первый элемент Пельтье контактирует одной стороной пластины с образцом, а другой стороной со вторым элементом Пельтье. Устройство дополнительно содержит радиатор, контактирующий со второй стороной второго элемента Пельтье, а также две