SHIROKOV SINGLE-PORT RESONANCE TRANSISTOR AMPLIFIER
FIELD: radio engineering.SUBSTANCE: invention relates to radio engineering and can be used in designing radio systems of various purposes. Especially useful could be the use of the amplifier when designing active transponders subject to reception, processing and reverse emission of received and ampl...
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Format: | Patent |
Sprache: | eng ; rus |
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Zusammenfassung: | FIELD: radio engineering.SUBSTANCE: invention relates to radio engineering and can be used in designing radio systems of various purposes. Especially useful could be the use of the amplifier when designing active transponders subject to reception, processing and reverse emission of received and amplified by amplitude radio-frequency or microwave signal. Novelty of the invention is the use of positive feedback to amplify signals within the range of microwaves and radio frequencies. Herewith the positive feedback is formed owing to structural inductance either as an inductance coil with branches (terminals) of known diameter, of known length and with known number of turns, or as a piece of a microstrip line with branches (terminals) of known thickness, of known width of the substrate and known length. Herewith the first output of the structural inductance is connected to a common wire, while its second output is connected by the alternating current to the field-effect transistor source. Third output of the structural inductance is supplied with an input microwave or radio-frequency signal. On the same output an output reinforced microwave or radio-frequency signal is registered. Herewith the fourth output of the structural inductance is connected by the alternating current to the field-effect transistor gate, that provides formation of the positive feedback. Herewith the drain of the field-effect transistor is connected by the alternating current through a blocking capacitor with the common wire, while by the direct current it is connected with the voltage supply terminal. Additionally it is possible to supply control DC voltage to the first or the second field-effect transistor gate or to its source.EFFECT: branches of the structural inductance, parameters of the field-effect transistor and/or control voltage level are selected so that the circuit self-excitation condition is not met, and signals are not generated.1 cl
Изобретение относится к области радиотехники и может быть использовано при построении радиотехнических систем различного назначения. Особенно полезным представляется использование усилителя при построении активных транспондеров, предполагающих прием, обработку и обратное излучение принятого и усиленного по амплитуде радиочастотного или микроволнового сигнала.Новым в изобретении является использование положительной обратной связи для усиления сигналов в области микроволн и радиочастот. Причем положительная обратная связь формируется за счет вы |
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