METHOD OF GROWING SILICON-GERMANIUM HETEROSTRUCTURES

FIELD: chemistry.SUBSTANCE: invention relates to technology of epitaxy of silicon-germanium heterostructures based on combined sublimation of silicon from surface of silicon source, heated by electric current, and germanium deposition of germane in one vacuum chamber, and can be used for production...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	DENISOV SERGEJ ALEKSANDROVICH, SHENGUROV VLADIMIR GENNADEVICH, CHALKOV VADIM YUREVICH
Format:	Patent
Sprache:	eng ; rus
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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