USE OF SURFACTANTS, CONTAINING AT LEAST THREE SHORT-CHAIN PERFLUORINATED GROUPS, FOR PRODUCTION OF MICROCHIPS, HAVING PATTERNS WITH DISTANCE BETWEEN LINES OF LESS THAN 50 NM

FIELD: chemistry.SUBSTANCE: described is use of surface-active substances A, 1 WT% water solution of which has static surface tension of < 25 mN/m. Said surfactants A contain three short-chain perfluorinated groups Rf, selected from group consisting of trifluoromethyl, pentafluoroethyl, 1-heptafluoropropyl, 2-heptafluoropropyl, heptafluoroizopropyl and pentafluorosulfanyl, for production of chips. Method of photolithography using surfactants A in immersion photoresist layers, photoresist layers exposed to actinic radiation, development solutions for exposed photoresist layers and/or in chemical flushing solutions for developed structured photoresists containing structures with distances between lines of less than 50 nm and with values of aspect ratio > 3.EFFECT: surfactants A prevent destruction of structures, reduce blur of image edges, delete defects in the form of traces from water and prevent their occurrence, as well as reduce defects due to removal of particles.15 cl, 1 dwg Описано применение поверхностно-активных веществ A, 1 мас.% водный раствор которых имеет статическое поверхностное натяжение 3. Посредством поверхностно-активных веществ A предотвращается разрушение структур, уменьшается размытие края изображения, удаляются дефекты в виде следов от воды и предотвращается их появление, а также уменьшаются дефекты вследствие удаления частиц. 2 н. и 13 з. п. ф-лы, 1 пр.