METHOD OF FORMING SWITCHING JUMPER

FIELD: physics.SUBSTANCE: in a method of forming a switching jumper between buses of two metal coating levels, which includes processes of forming a via-hole in inter-level insulation to the bus of the first metal coating level, depositing jumper layers and metal coating of the second level into the...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: BABKIN SERGEJ IVANOVICH, VOLKOV SVJATOSLAV IGOREVICH
Format: Patent
Sprache:eng ; rus
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:FIELD: physics.SUBSTANCE: in a method of forming a switching jumper between buses of two metal coating levels, which includes processes of forming a via-hole in inter-level insulation to the bus of the first metal coating level, depositing jumper layers and metal coating of the second level into the via-hole and forming a jumper and a bus for the metal coating of the second level, according to the invention, formation of the jumper is carried out simultaneously with formation of an intermediate inter-level connection via consecutive deposition of jumper layers and layers of the intermediate inter-level connection based on tungsten and titanium nitride films into the via-hole with diameter d, in an intermediate insulating layer of thickness h to the bus of the metal coating of the first level with the ratio h/d, which provides uniform deposition of jumper layers, and subsequent chemical-mechanical polishing of the deposited layers, and connection of the jumper with buses of the metal coating of the second level is carried out through the contact pad of the jumper based on titanium and titanium nitride films and additional inter-level connection to the contact pad based on titanium, tungsten and titanium nitride films.EFFECT: high reliability of the jumper and metal coating overall by preventing diffusion of aluminium atoms into the jumper structure and preserving the technique of forming metal coating buses on a planar surface, reduced feature size of the jumper and high uniformity of layers thereof on the thickness, high resistance of the jumper in an off state and high reproducibility of breakdown voltage of the jumper.10 dwg Изобретение относится к области вычислительной техники и может быть использовано при изготовлении больших интегральных схем (БИС), в том числе БИС на основе комплементарных транзисторов со структурой металл-окисел-полупроводник (КМОП БИС), программируемых матричных БИС, программируемых логических интегральных схем (ПЛИС), однократно программируемых постоянных запоминающих устройств (ППЗУ). Технический результат от использования изобретения заключается в повышении надежности перемычки и металлизации в целом путем предотвращения диффузии атомов алюминия в структуру перемычки и сохранения технологии формирования шин металлизации на планарной поверхности, уменьшения топологического размера перемычки и повышения однородности ее слоев по толщине, увеличения сопротивления перемычки в выключенном состоянии и повышения воспроизводимости напря