SUBSTRATE FOR CHEMICAL VAPOUR DEPOSITION (CVD) OF DIAMOND AND METHOD FOR OBTAINING THEREOF

FIELD: chemistry.SUBSTANCE: invention relates to substrate for diamond coating, applied by chemical vapour deposition (CVD) method, method for its formation and electrode rod for formation of substrate by said method. Substrate contains base of carbide solid alloy or steel and layer, which contains diamond particles as seed crystal in matrix, which are deposited connected with matrix material on the surface of said base, in which said seed diamond particles have average particle size 1 mcm or smaller. Said matrix contains first element, selected from first group, consisting of Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W, and/or first compound of said first element and non-metal substance, selected from boron, carbon and nitrogen, and is made with possibility of holding diamond particles, distributed in it. Connective zone is formed as a result of diffusion of atoms of said first element and said carbide solid alloy or steel and distribution through material of said matrix and said base. Electrode rod is made by pressing mixed powder, obtained by mixing powder of at least one first element, selected from first group, consisting of Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W, and/or powder of inter-metal compound of said first element and second element, selected from the group, consisting of Al, Si and Ni, and powder of first compound of said first element and non-metal substance, selected from boron, carbon and nitrogen.EFFECT: provided is technology for obtaining substrate for deposition of diamond layer on instrument materials, for instance, from tungsten-carbide alloy, and constructive materials, containing metals of iron group, without deterioration of base material properties.13 cl, 1 dwg, 11 ex Изобретение относится к подложке для алмазного покрытия, наносимого методом химического осаждения из паровой фазы (CVD), способу ее формирования и электродному стержню для формирования подложки упомянутым способом. Подложка содержит основу из карбидного твердого сплава или стали и слой, который содержит алмазные частицы в качестве кристалла-затравки в матрице, которые осаждаются соединенными с материалом матрицы на поверхности указанной основы, в которой указанные затравочные алмазные частицы имеют средний размер частиц 1 мкм или мельче. Указанная матрица содержит первый элемент, выбранный из первой группы, состоящей из Si, Ti, Zr, Hf, V, Nb, Та, Cr, Mo и W, и/или первое соединение указанного первого элемента и неметаллического вещества, выбранного из бора, углерода и