SEMICONDUCTOR STRUCTURAL ELEMENT WITH OPTIMISED BOUNDARY TERMINATION

FIELD: instrument making.SUBSTANCE: in semiconductor structural element fitted with the semiconductor body (21) with the first side (22), the second side (23) and the edge (24), the internal zone (27) with the main alloying of the first conductivity type located between the first side (22) and the internal zone (27), the first semiconductor zone (61) of the first conductivity type with alloying concentration exceeding the concentration of alloying of the internal zone (27), the second semiconductor zone (29) of the second conductivity type located between the second side (23) and the internal zone (27) with the alloying concentration exceeding the alloying concentration of the internal zone (27), at least, one first boundary bevel which passes under the first angle (30) to the plane of transition from the second semiconductor zone (29) to the internal zone (27), at least, along the edge (24) of the second semiconductor zone (29) and the internal zone (27), the second boundary bevel with the second angle (71), the value of which is less than the value of the first angle which passes along the edge (24) of the first semiconductor zone (61) or the hidden semiconductor zone (41). The hidden semiconductor zone (41) of the second conductivity type with the alloying concentration, exceeding that in the internal zone (27), is provided between the first semiconductor zone (61) and the internal zone (27) and passes almost parallel to the first semiconductor zone (61).EFFECT: invention allows to exclude high field force peaks in the boundary area occurring during switching off of semiconductor structural elements and also provides the improved reproducibility and smaller variability of electric properties.10 cl, 7 dwg Изобретение относится к полупроводниковым приборам. В полупроводниковом конструктивном элементе, имеющем полупроводниковое тело (21) с первой стороной (22), второй стороной (23) и краем (24), внутреннюю зону (27) с основным легированием первого типа проводимости, расположенную между первой стороной (22) и внутренней зоной (27) первую полупроводниковую зону (61) первого типа проводимости с концентрацией легирования, которая выше концентрации легирования внутренней зоны (27), расположенную между второй стороной (23) и внутренней зоной (27) вторую полупроводниковую зону (29) второго типа проводимости, с концентрацией легирования выше концентрации легирования внутренней зоны (27), по меньшей мере один первый краевой скос, который проходит под первым углом (