DEVICE FOR DETERMINATION OF PARAMETERS OF METAL-DIELECTRIC STRUCTURES

FIELD: measurement equipment.SUBSTANCE: device for determining parameters of metal-dielectric structures, which contains a wave-guiding system connected to a cylindrical resonator, in the hole of which a coupling element is arranged, differs by the fact that the coupling element is of measurement type and made in the form of an adjustable quarter-wave frame, one end of which is connected to the housing of the cylindrical resonator, and the other one is made in the form of a nib point placed into a dielectric insert arranged in the holes of the cylindrical resonator housing and projecting beyond external boundaries of the resonator by the value that is smaller than length of a standing electromagnetic wave of the main type of the cylindrical resonator; the device includes additional coupling element intended for input/output of electromagnetic radiation of microwave range, which is made in the form of two metal quarter-wave frames connected to each other with one end and placed into a dielectric insert located in the holes between the wave-guiding system and the cylindrical resonator housing. The first frame is made so that its plane can be turned and the same frame is located in the inner cavity of the cylindrical resonator, and the second one is located in the wave-guiding system; other ends of frames are connected to the cylindrical resonator housing and the wave-guiding systems accordingly; in the wave-guiding system an arrangement is made for a one-dimensional waveguide microwave photonic crystal representing periodically alternating layers of two types; layers of the first type have constant value of relative dielectric permeability that is higher than one, and layers of the second type - close to one; total number of layers and number of layers of the second type - uneven; layers of the first type are extreme in the photonic crystal structure; thickness of layers of the first type is less than thickness of layers of the second type; sum of electrical lengths of layers of the first and the second types is equal to half length of an electromagnetic wave, which corresponds to the middle of the used frequency range; thickness of central layer of photonic crystal comprises one fourth of thickness of the layer of the second type.EFFECT: improving sensitivity and enlarging functional capabilities.4 dwg Изобретение относится к измерительной технике, может быть использовано для измерения диэлектрической проницаемости и толщин нанометровых проводящих пленок, н