METHOD TO MAKE HIGH VOLTAGE SILICON-CARBIDE DIODE BASED ON ION-DOPED P-N-STRUCTURES

FIELD: electricity.SUBSTANCE: method to make a high voltage silicon-carbide diode based on ion-doped p-n-structures involves coating of a heavily doped substrate 6H-SiC with low-doped epitaxial layer 10÷15 mcm thick by chemical deposition from gas phase, afterwards the said layer is subject to ion-i...

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Hauptverfasser:	GUDKOV VLADIMIR ALEKSEEVICH, GUSEV ALEKSANDR SERGEEVICH, KARGIN NIKOLAJ IVANOVICH, RYNDJA SERGEJ MIKHAJLOVICH, RYZHUK ROMAN VALERIEVICH
Format:	Patent
Sprache:	eng ; rus
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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