METHOD OF MAKING FIELD-EFFECT NANOTRANSISTOR WITH SCHOTTKY CONTACTS WITH SHORT NANOMETRE-LENGTH CONTROL ELECTRODE

FIELD: physics.SUBSTANCE: method of making field-effect nanotransistor with Schottky contacts at the source/drain and a nanometre-length control electrode involves selecting on a semiconductor substrate an active region of the device, depositing on the surface of the semiconductor substrate a source/drain contact layer consisting of two layers - a first (lower) layer, thinner than the second layer, which is resistant to plasma-chemical etching, in which sharp edges of the Schottky source/drain contacts are formed and a second (top), plasma-chemical etched layer for increasing the total thickness of the contact layer which provides low resistance of the source/drain contacts. Layers of an auxiliary layer are then deposited, said layer consisting of a dielectric layer and a metal layer in which lithography, self-forming and plasma-chemical etching methods are used to form a nanometre slit through which plasma-chemical etching of the material of the second (top) layer of the source/drain contact layer is carried out, and for further reduction of the length of the control electrode and insulation thereof from the source/drain contacts in the formed nanometre slit, a low-permittivity dielectric is deposited; dielectric spacers are formed on the side walls of the slit by plasma-chemical etching and the metal of the first (lower) layer of the contact layer at the bottom of the slit is removed by isotropic chemical etching, with subsequent deposition into that depressed slit of a high-permittivity gate insulator and material of the control electrode, and the gate is formed. The contact area of the control electrode is formed at the same time as the control electrode, and after removing the auxiliary layer from unprotected areas, contact areas for the source/drain are formed.EFFECT: reducing the length of the control electrode to a few nanometres, making components of a field-effect nanotransistor using a self-aligned technique, using metals and metal silicides as contact layers.19 cl, 12 dwg Использование: в области микро- и наноэлектроники. Сущность изобретения: способ изготовления полевого нанотранзистора с контактами Шоттки на истоке/стоке и с управляющим электродом нанометровой длины включает выделение на полупроводниковой подложке активной области прибора, нанесение на поверхность полупроводниковой подложки контактного слоя истока/стока, состоящего из двух слоев - первого (нижнего), более тонкого, чем второй, стойкого к плазмохимическому травлению (ПХТ), в ко