METHOD OF MEASURING NANO-SIZED CONDUCTING SURFACE RELIEF WITH PHOTON ULTIMATE ANALYSIS OF MATERIAL

FIELD: physics. ^ SUBSTANCE: proposed method comprises defining 3D profile of semiconductor or metal surface on bringing probe with metal tip thereto along vertical coordinate Z. Note here that surface under probe nano-tip is irradiated by optical radiation with wavelength from IR to UV with constan...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	AKCHURIN GARIF GAZIZOVICH, VOLKOV JURIJ PETROVICH, AKCHURIN GEORGIJ GARIFOVICH
Format:	Patent
Sprache:	eng ; rus
Schlagworte:	APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBEMICROSCOPY [SPM] MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MANUFACTURE OR TREATMENT THEREOF MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES MEASURING NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS NANOTECHNOLOGY PERFORMING OPERATIONS PHYSICS SCANNING-PROBE TECHNIQUES OR APPARATUS SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TESTING TRANSPORTING
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