METHOD FOR SYNTHESIS OF POLYCRYSTALLINE SILICON

FIELD: chemistry. ^ SUBSTANCE: invention can be used in production semiconductor materials, solar cells and in microelectronics. Silicon is deposited on substrates made from pure silicon, which are pre-heated with high frequency current. ^ EFFECT: obtaining highly pure silicon. ^ 2 cl, 2 dwg Изобрет...

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Hauptverfasser:	PAVLOVA MARINA LEONIDOVNA, IVANOV NIKITA ALEKSANDROVICH, LOPATIN VLADIMIR VASIL'EVICH, SOLDATOV ALEKSEJ IVANOVICH
Format:	Patent
Sprache:	eng ; rus
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	FIELD: chemistry. ^ SUBSTANCE: invention can be used in production semiconductor materials, solar cells and in microelectronics. Silicon is deposited on substrates made from pure silicon, which are pre-heated with high frequency current. ^ EFFECT: obtaining highly pure silicon. ^ 2 cl, 2 dwg Изобретение может быть использовано в производстве полупроводниковых материалов, солнечных элементов и микроэлектронике. Кремний осаждают на предварительно нагретые высокочастотным током подложки из чистого кремния. Изобретение позволяет получать кремний высокой чистоты. 1 з.п. ф-лы, 2 ил.