METHOD FOR PRODUCTION OF SEMICONDUCTOR CRYSTALS OF AIIBVI TYPE

FIELD: electricity. ^ SUBSTANCE: method is carried out by method of vertically directed crystallization in quartz ampoule with internal coating from alternating layers -SiO2 and -SiO1.5:Cn, where n=1.04.0, in bottom part of ampoule there is hole arranged with diametre of 3-5 mm by all height of coat...

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Bibliographische Detailangaben

Hauptverfasser:	SHMATOV NIKOLAJ IVANOVICH, AVERICHKIN PAVEL ANDREEVICH, SHLENSKIJ ALEKSEJ ALEKSANDROVICH, KONOVALOV ALEKSANDR APOLLONOVICH
Format:	Patent
Sprache:	eng ; rus
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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