FLASH MEMORY ELEMENT OF ELECTRICALLY ALTERABLE READ-ONLY MEMORY

FIELD: physics, computer engineering. ^ SUBSTANCE: invention is related to computer engineering. Flash element of electrically alterable read-only memory is designed for storage of information in case of disconnected power supply. On semiconductor substrate between source and drain there are tunnel...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: NOVIKOV JURIJ NIKOLAEVICH
Format: Patent
Sprache:eng ; rus
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!