WAY OF REALISATION OF STRUCTURE OF MULTILAYERED PHOTO-ELECTRIC CONVERTER

FIELD: physics. ^ SUBSTANCE: method of making a multilayer structure of the two-junction photo-electric converter, including consecutive sedimentation of back potential barrier from trimethyl gallium (TMGa) from gas phase on a substrate of r-type GaAs, trimethyl aluminium (TMAl), arsine (AsH3) and a source of an r-admixture, base from TMGa and AsH3 and a source of an r-admixture, an emitter from TMGa and AsH3 and a n-admixture source, large-gap window after temperature increase to value of temperature of the subsequent layer from TMGa, TMAI and AsH3 and a source of a n-admixture with formation bottom p-n transition at a molar ratio of sources of element atoms of the fifth and third group 60-75, a layer of n++-GaAs from TMGa, AsH3 and a source of a n-admixture which is performed without interruption of component supply in a gas phase on heteroborder AlGaAs/GaAs; layer of p++-AlGaAs from TMGa, AsH3 with Esaki diode formation at a molar ratio of sources of element atoms of the fifth and third group 1-5, back potential barrier from TMGa, trimethyl indium (TMIn), phosphine (PH3) and a source of a r-admixture, base from TMGa, TMIn, PH3 and a source of a r-impurity, the emitter from TMGa, TMIn, PH3 and a source of a n-admixture, a layer of a large-gap window from TMAI, TMIn, PH3 and a source of a n-admixture with formation of top p-n transition and an epitaxial contact layer from TMGa, AsH3 and a n-admixture source. ^ EFFECT: invention provides reception of structure of the two-junction photo-electric converter which is ensuring functioning of the solar cell created on the basis of given structure in a wide band of concentration of a solar energy, reduction in price of processing technique of cultivation of structure and improvement of photoluminescent properties of the epilayers which are a part of multitransitive structure that can increase structure physical parametres. ^ 6 cl, 3 ex, 2 tbl, 12 dwg Способ получения многослойной структуры двухпереходного фотоэлектрического преобразователя, включающий последовательное осаждение из газовой фазы на подложку p-типа GaAs тыльного потенциального барьера из триметилгаллия (TMGa), триметилалюминия (TMAl), арсина (AsH3) и источника p-примеси, базы из TMGa и AsH3 и источника p-примеси, эмиттера из TMGa и AsH3 и источника n-примеси, широкозонного окна после повышения температуры до значения температуры последующего слоя из TMGa, ТМАl и AsH3 и источника n-примеси с образованием нижнего p-n перехода при мольном соотношении и