THIN-FILM SEMICONDUCTOR INJECTION LASER BASED ON MULTIPLE PASS SEMICONDUCTOR HETEROSTRUCTURE (VERSIONS)

THIN-FILM SEMICONDUCTOR INJECTION LASER BASED ON MULTIPLE PASS SEMICONDUCTOR HETEROSTRUCTURE (VERSIONS)

FIELD: physics, optics. ^ SUBSTANCE: present invention pertains to semiconductor devices, and more specifically, to lasers based on multiple pass p-n heterostructures. The laser based on p-n multiple pass heterostructures, consists of a doped active area in the form of a semi-conductive layer with a...

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Hauptverfasser: TISHIN JURIJ IVANOVICH, SIDOROVA LJUDMILA PETROVNA, BEKIREV UVINALIJ AFANAS'EVICH
Format: Patent
Sprache:eng ; rus
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BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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creator TISHIN JURIJ IVANOVICH
SIDOROVA LJUDMILA PETROVNA
BEKIREV UVINALIJ AFANAS'EVICH
description FIELD: physics, optics. ^ SUBSTANCE: present invention pertains to semiconductor devices, and more specifically, to lasers based on multiple pass p-n heterostructures. The laser based on p-n multiple pass heterostructures, consists of a doped active area in the form of a semi-conductive layer with a thickness of not less than two Debye lengths, located between wide-band gap layers of n- and p- conduction types. Thickness of the laser heterostructures is not less than 8-10 Debye lengths and does not exceed 20/40 microns and it is welded or glued on one of its contact surfaces to the lamel-carrier and electrically joined with it. ^ EFFECT: reduction of the value of the operating current and threshold current density, and also an increase in the external quantum efficiency and improvement in other laser characteristics. ^ 5 cl, 2 dwg
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subjects BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
title THIN-FILM SEMICONDUCTOR INJECTION LASER BASED ON MULTIPLE PASS SEMICONDUCTOR HETEROSTRUCTURE (VERSIONS)
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