THIN-FILM SEMICONDUCTOR INJECTION LASER BASED ON MULTIPLE PASS SEMICONDUCTOR HETEROSTRUCTURE (VERSIONS)

FIELD: physics, optics. ^ SUBSTANCE: present invention pertains to semiconductor devices, and more specifically, to lasers based on multiple pass p-n heterostructures. The laser based on p-n multiple pass heterostructures, consists of a doped active area in the form of a semi-conductive layer with a thickness of not less than two Debye lengths, located between wide-band gap layers of n- and p- conduction types. Thickness of the laser heterostructures is not less than 8-10 Debye lengths and does not exceed 20/40 microns and it is welded or glued on one of its contact surfaces to the lamel-carrier and electrically joined with it. ^ EFFECT: reduction of the value of the operating current and threshold current density, and also an increase in the external quantum efficiency and improvement in other laser characteristics. ^ 5 cl, 2 dwg