METHOD OF SEMICONDUCTOR PHOTOTRANSFORMER MANUFACTURING

FIELD: physics, semiconductors. ^ SUBSTANCE: invention concerns the electronic technics, namely to manufacturing techniques of semiconductor phototransformers (SP) and can be used in manufacture of recommenced energy sources. A problem of the offered invention is making of an expedient of manufactur...

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Bibliographische Detailangaben
Hauptverfasser:	STREBKOV DMITRIJ SEMENOVICH, ZADDEH VITALIJ VIKTOROVICH, POLJAKOV VLADIMIR IVANOVICH
Format:	Patent
Sprache:	eng ; rus
Schlagworte:	BASIC ELECTRIC ELEMENTS CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
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Beschreibung
Zusammenfassung:	FIELD: physics, semiconductors. ^ SUBSTANCE: invention concerns the electronic technics, namely to manufacturing techniques of semiconductor phototransformers (SP) and can be used in manufacture of recommenced energy sources. A problem of the offered invention is making of an expedient of manufacturing a semiconductor phototransformer providing increase of efficiency of matrix phototransformers. The essence of the invention consists that after metallisation semiconductor structures agglomerate in a leaky pile, fill gaps in a pile with a brazing flux, immerse a pile in the fused solder and under axial pressure delete a redundant stratum of solder. The invention provides efficiency increase of phototransformers at the expense of use of the operations providing increase of homogeneity of a metal layer of linking of semiconductor plates in a pile. ^ EFFECT: efficiency increase of phototransformers at the expense of use of the operations providing increase of homogeneity of a metal layer of linking of semiconductor plates in a pile.