CRUCIBLE FOR SILICON CARBIDE EPITAXY

FIELD: chemistry; processes to manufacture silicon carbide monocrystals by gaseous epitaxy. ^ SUBSTANCE: crucible comprises body and cover with pedestal, the cover being provided with concentric slots for heat-transfer elements. The latter increase temperature of cover surface portion, on which poly...

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Hauptverfasser:	SAFARALIEV GADZHIMET KERIMOVICH, GITIKCHIEV MAGOMED AKHMEDOVICH, BILALOV BILAL ARUGOVICH
Format:	Patent
Sprache:	eng ; rus
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	FIELD: chemistry; processes to manufacture silicon carbide monocrystals by gaseous epitaxy. ^ SUBSTANCE: crucible comprises body and cover with pedestal, the cover being provided with concentric slots for heat-transfer elements. The latter increase temperature of cover surface portion, on which polycrystals grow, thus retarding their growth. As a result, SiC monocrystal being grown starts to grow also in direction 90 degrees to (0001) face, using polycrystal surface as pedestal extension. ^ EFFECT: in a few cycles, monocrystal diameter extends over the whole cover surface and continues to increase in height, despite of parasitic polycrystalline growth around. ^ 2 dwg