CARBON NANOSTRUCTURE PREPARATION METHOD

FIELD: carbon materials. ^ SUBSTANCE: invention relates to preparing carbon nanostructures on surfaces of solids with the aid of electron probe and can be used in electron lithography to make shields used for subsequent formation of semiconductor structures via chemical, plasma, and ionic etching. Method of invention comprises applying fullerite film onto substrate, irradiating in vacuum areas of film having specified shape and dimensions with at least one electron beam with diameter lesser than minimum linear dimension of resulting elements of structure until material of these areas is converted into polymerized fullerite, after which non-irradiated areas are removed by treatment with organic solvent. Thickness of film is selected lesser than depth of penetration of electrons into film material. Whole structure obtained after treatment with organic solvent is then evenly irradiated with electron beam to convert polymerized fullerite into amorphous carbon. ^ EFFECT: increased lateral resolution of carbon structure characterized by high electric conductivity and heat resistance. ^ 3 cl