DEVICE FOR FEEDING OF THE GALLIUM CHLORIDE VAPORS AT THE GAS-PHASE DEPOSITION OF THE L3T5 COMPOUNDS

FIELD: chemical industry; semi-conductors industry; other industries; devices for feeding of the gallium chloride vapors at the gas-phase deposition of the 35 compounds. ^ SUBSTANCE: the invention is pertaining to production of the 35 semi-conducting compounds used for manufacture of the substrates based on GaN, GaAs, GaP, etc. The device for feeding of the gallium chloride vapors at the gas-phase deposition of the 35 compounds contains two tanks connected among themselves, one of which is intended for storage of gallium chloride, and the other - for batching of the gallium chloride vapors into the deposition zone by the stream of the gas-carrier. The device contains the thermostat, in which the indicated tanks are located. At that the tank for batching is rigidly fixed in it, and the tank for storage is tightened with the capability of relocation in the vertical direction concerning the batching tank. The tanks contain the upper and side fitting pipes for the gas-carrier inlet and outlet accordingly. At that the side fitting pipe of the storage tank is connected with the upper fitting pipe of the batching tank, and the lower fitting pipes used for relocation of the liquid gallium chloride from one tank into another tank connected among themselves. All the joints are executed by the flexible pipelines. The thermostat is placed on the stand with the capability of turning by 90 degrees round the horizontal axis coinciding with the axis of the inlet fitting pipe of the storage tank and with the axis of the outlet fitting pipe of the batching tank. The device ensures production of the massive (with the thickness exceeding 1 mm) layers of the 35 compounds with the preset characteristics (the thickness, the composition, etc.) at the expense of maintaining of the constant concentration of the gallium chloride in the gas-carrier to the extent of its consumption in the process of growing of the layers. ^ EFFECT: the invention ensures production of the massive with the thickness exceeding 1 mm layers of the 35 compounds with the preset characteristics of the thickness, the composition and others due to maintaining of the constant concentration of the gallium chloride in the gas-carrier to the extent of its consumption in the process of growing of the layers. ^ 1 dwg