METHOD OF PRODUCTION OF CHARGE FOR GROWING MONOCRYSTALS ON BASE OF OXIDES OF RARE-EARTH METALS, TRACE METALS AND REFRACTORY METALS OR SILICON

FIELD: chemical technology of composite materials. ^ SUBSTANCE: proposed method includes mixing of starting oxides at stoichiometric ratio of components, heating the mixture at rate of 30-350°C/h to temperature of 1460-1465°C and sintering at this temperature for 6.5-8.0 h. Mixing of starting oxides...

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Hauptverfasser: BUZANOV OLEG ALEKSEEVICH, ANIKIN OLEG VIKTOROVICH, POLJAKOVA GALINA VASIL'EVNA, LISITSKIJ IGOR' SERAFIMOVICH, DAVYDENKO ALEKSANDR VLADIMIROVICH, KOZNOV GEORGIJ GEORGIEVICH, GOLOVANOV VALERIJ FILIPPOVICH
Format: Patent
Sprache:eng ; rus
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Zusammenfassung:FIELD: chemical technology of composite materials. ^ SUBSTANCE: proposed method includes mixing of starting oxides at stoichiometric ratio of components, heating the mixture at rate of 30-350°C/h to temperature of 1460-1465°C and sintering at this temperature for 6.5-8.0 h. Mixing of starting oxides may be performed at application of vibrations at frequency of 50-100 Hz and amplitude of 3-5 mm. Synthesis is carried out in alundum sleeves on whose inner surfaces layer of gallium oxide is applied. Proposed method makes it possible to obtain the charge of homogeneous phase and stoichiometric composition. Yield of phase being synthesized is practically 100%. ^ EFFECT: enhanced efficiency. ^ 3 cl, 3 tbl, 3 ex