METHOD FOR CORRECTING SPECTRAL SENSITIVITY OF SEMICONDUCTOR PHOTORESISTOR BY LASER RADIATOR

METHOD FOR CORRECTING SPECTRAL SENSITIVITY OF SEMICONDUCTOR PHOTORESISTOR BY LASER RADIATOR

FIELD: extending spectral sensitivity area of infrared photoresistors for correcting their sensitivity area. ^ SUBSTANCE: spectral sensitivity of semiconductor photoresistors can be corrected without dismounting their optoelectronic systems and without replacing them by direct frontal impact of lase...

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Hauptverfasser: SUKHOVEJ SERGEJ BORISOVICH, FEDICHEV ANDREJ VALER'EVICH, KULIEV SHAMIL' VASIFOVICH, CHEKANOVA GALINA VASIL'EVNA, SAKHAROV MIKHAIL VIKTOROVICH, SREDIN VIKTOR GENNAD'EVICH
Format: Patent
Sprache:eng ; rus
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:FIELD: extending spectral sensitivity area of infrared photoresistors for correcting their sensitivity area. ^ SUBSTANCE: spectral sensitivity of semiconductor photoresistors can be corrected without dismounting their optoelectronic systems and without replacing them by direct frontal impact of laser pulse at quantum energy exceeding width of forbidden gap material by minimum 0.1 Fg on sensing element of semiconductor photoresistor built around solid solution. ^ EFFECT: enhanced uniformity of spectral characteristic due to higher sensitivity of photodetector in short-wave region of spectrum. ^ 1 cl, 3 dwg