SELECTIVE ETCHANT FOR ALUMINUM-ARSENIC AND ALUMINUM-GALLIUM-ARSENIC LAYERS RELATIVE TO GALLIUM-ARSENIC ONE

FIELD: manufacture of microelectronic and nanoelectronic devices. ^ SUBSTANCE: selective etchant of AlAs and AlGaAs layers relative to GaAs has iodine I2 and organic solvent wherein iodine I2 is dissolved, proportion of mentioned components being as follows, mass percent: iodine, 0.1 - 4; organic so...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	PRINTS VIKTOR JAKOVLEVICH, SOOTS REGINA AL'FREDOVNA
Format:	Patent
Sprache:	eng ; rus
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	FIELD: manufacture of microelectronic and nanoelectronic devices. ^ SUBSTANCE: selective etchant of AlAs and AlGaAs layers relative to GaAs has iodine I2 and organic solvent wherein iodine I2 is dissolved, proportion of mentioned components being as follows, mass percent: iodine, 0.1 - 4; organic solvent, 96 - 99.9. Isopropyl alcohol or acetone can be used as organic solvent. Enhanced selectivity of etching AlAs and AlGaAs layers including those with low Al content (below 40%), as well as their high selectivity relative to InAs and InGaAs are attained at room temperature. ^ EFFECT: ability of using proposed etchant in nanotechnology for separating upper layers in the order of several single layers. ^ 2 cl